Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

被引：18

作者：

Yan, Xin ^{[1
]}

Wei, Wei ^{[2
,3
]}

Tang, Fengling ^{[1
]}

Wang, Xi ^{[4
]}

Li, Luying ^{[4
]}

Zhang, Xia ^{[1
]}

Ren, Xiaomin ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Univ Coll Cork, Dept Phys, Western Rd, Cork, Ireland

[3] Tyndall Natl Inst, Cork, Ireland

[4] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Ctr Nanoscale Characterizat & Devices, Wuhan 430074, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 06期

基金：

爱尔兰科学基金会; 北京市自然科学基金; 中国国家自然科学基金;

关键词：

SINGLE-NANOWIRE; OPTICAL-PROPERTIES; GAAS NANOWIRES; DOT LASERS; WAVELENGTH; DEPENDENCE; LINEWIDTH; MECHANISM; EPITAXY; DEVICES;

D O I：

10.1063/1.4975780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm(2), a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers. Published by AIP Publishing.

引用

页数：5

共 50 条

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