WS2;
nanoflakes;
Ammonia sensor;
Room-temperature gas sensors;
GAS SENSOR;
MOS2;
NH3;
MOLECULES;
HUMIDITY;
D O I:
10.1016/j.snb.2016.08.163
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
A selective room-temperature ammonia sensor using WS2 nanoflakes as the sensing materials was successfully developed in this work. The two-dimensional WS2 sharing the same structure with MoS2, has a typical graphene-like 2D microstructure. The WS2 nanoflakes based sensor shows a good sensitivity and an excellent selectivity to ammonia at room temperature. The sensor showed an increased resistance when exposed to ammonia from 1 ppm to 10 ppm indicating a p-type response. The response and recovery time of the sensor to 5 ppm ammonia are similar to 120 s and similar to 150 s, respectively. The developed ammonia sensor shows excellent selectivity to formaldehyde, ethanol, benzene and acetone at room temperature. The response of the sensor increased as the humidity increase up to 73% possibly due to the sulfides ions-assisted hydroxylation of the co-adsorbed water and the oxidation of the solvated ammonia with adsorbed oxygen ions on the surface of the WS2 nanoflakes. (C) 2016 Elsevier B.V. All rights reserved.
机构:
School of Microelectronics, Dalian University of Technology, DalianSchool of Microelectronics, Dalian University of Technology, Dalian
Guang Q.
Huang B.
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h-index: 0
机构:
School of Microelectronics, Dalian University of Technology, DalianSchool of Microelectronics, Dalian University of Technology, Dalian
Huang B.
Yu J.
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h-index: 0
机构:
School of Biomedical Engineering, Dalian University of Technology, DalianSchool of Microelectronics, Dalian University of Technology, Dalian
Yu J.
Bonyani M.
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h-index: 0
机构:
Department of Materials Science and Engineering, School of Engineering, Shiraz University, ShirazSchool of Microelectronics, Dalian University of Technology, Dalian
Bonyani M.
Moaddeli M.
论文数: 0引用数: 0
h-index: 0
机构:
Department of Materials Science and Engineering, School of Engineering, Shiraz University, ShirazSchool of Microelectronics, Dalian University of Technology, Dalian
Moaddeli M.
Kanani M.
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h-index: 0
机构:
Department of Materials Science and Engineering, School of Engineering, Shiraz University, ShirazSchool of Microelectronics, Dalian University of Technology, Dalian
Kanani M.
Mirzaei A.
论文数: 0引用数: 0
h-index: 0
机构:
Department of Materials Science and Engineering, Shiraz University of Technology, ShirazSchool of Microelectronics, Dalian University of Technology, Dalian
Mirzaei A.
Kim H.W.
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h-index: 0
机构:
Division of Materials Science and Engineering, Hanyang University, Seoul
The Research Institute of Industrial Science, Hanyang University, SeoulSchool of Microelectronics, Dalian University of Technology, Dalian
Kim H.W.
Kim S.S.
论文数: 0引用数: 0
h-index: 0
机构:
Department of Materials Science and Engineering, Inha University, IncheonSchool of Microelectronics, Dalian University of Technology, Dalian
Kim S.S.
Li X.
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h-index: 0
机构:
School of Microelectronics, Dalian University of Technology, DalianSchool of Microelectronics, Dalian University of Technology, Dalian