Self-Adaptation Techniques for Mixed-Signal SiGe BiCMOS ICs

被引:0
作者
Bratov, Vladimir [1 ]
Katzman, Vladimir [1 ]
Gryunshpan, Aleksandr [1 ]
Bratov, Andrey [1 ]
机构
[1] ADSANTEC, Los Angeles, CA USA
来源
2013 NASA/ESA CONFERENCE ON ADAPTIVE HARDWARE AND SYSTEMS (AHS) | 2013年
关键词
integrated circuits; silicon-germanium; SiGe; BiCMOS; tolerance to process deviations; tolerance to environmental conditions; self-adaptation; user-controlled adaptation; direct compensation techniques comparative; compensation techniques;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Self-adaptation and user-controlled adaptation are powerful techniques that can be used for stabilization and performance improvement of analog and mixed-signal ICs. Those techniques are particularly useful for silicon-germanium BiCMOS circuits that offer advanced operational characteristics desirable for ground-based and space-oriented electronics. This paper presents a set of self-adaptation techniques based on generating and combining currents that represent temperaturerelated and process-related parameter deviations of bipolar transistors and resistors in BiCMOS ICs. In combination with several well-known compensation methods, such as Beta compensation and duty-cycle stabilization, the proposed techniques lead to more stable characteristics of highperformance ICs with higher tolerance to variable external conditions. This is specifically important for space-related products that operate within harsh environments. The efficiency of the proposed self-adaptation design approach has been demonstrated through the development and successful testing of a high-speed delay line IC for clock and binary data signals. Application of the proposed approach is not limited to the presented example. It will be efficient for stabilization of any characteristic in silicon-germanium BiCMOS circuits that can be electrically manipulated.
引用
收藏
页码:92 / 98
页数:7
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