Curvature compensation;
high-precision;
MOSFET-only;
sub-1-V;
system-on-chip;
voltage reference;
wide-band high power supply rejection ratio (PSRR);
zero-temperature coefficient (ZTC) point;
BANDGAP REFERENCE;
INACCURACY;
CIRCUITS;
3-SIGMA;
SENSOR;
D O I:
10.1109/JSSC.2016.2627544
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper describes an MOSFET-only voltage reference realized in 65-nm CMOS featuring a temperature coefficient (TC) of 5.6 ppm/degrees C from -40 degrees C to 125 degrees C, a power supply rejection ratio of 87 dB from dc up to 800 kHz (and 75 dB at 1 MHz), a minimum supply voltage of 0.8 V, and a power dissipation of 13 mu W. These attributes are achieved by exploiting the zero-TC point of an MOSFET and combining it with a novel curvature-compensation technique, an active attenuator, and an impedance-adapting frequency compensation scheme.