Positron and X-ray diffraction study of Cu-Se, In-Se and CuInSe2 thin films

被引：11

作者：

Nancheva, N ^{[1
]}

Docheva, P

Djourelov, N

Balcheva, M

机构：

[1] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria

[2] Inst Nucl Energy Res, Sofia 1784, Bulgaria

[3] Univ Rousse, Dept Mat Sci, Rousse 7017, Bulgaria

来源：

MATERIALS LETTERS | 2002年 / 54卷 / 2-3期

关键词：

annealing; DC magnetron sputtering; CIS films; X-ray diffraction; positron annihilation;

D O I：

10.1016/S0167-577X(01)00557-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu-Se, In-Se and CuInSe2 films obtained by D.C. magnetron sputtering on molybdenum substrates were studied by X-ray diffraction (XRD) and positron annihilation spectroscopy (PAS). The XRD data showed that all studied films are crystalline and some of them are textured. Positron lifetime technique indicated the presence of monovacancy and small vacancy clusters. The annealing at 400 degreesC for 1 h influenced the phase composition. surface morphology and defect structure. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 174

页数：6

共 21 条

[1] CuInSe2 thin films formed by selenization of Cu-In precursors [J].