An investigation of the optical and structural properties of PECVD a-SiH thin films grown on a porous anodic aluminum template

被引：1
|
作者：
Dhahri, S. [1 ]
Fazio, E. [2 ]
Ghrib, M. [1 ]
Neri, F. [2 ]
El Khirouni, K. [3 ]
Ezzaouia, H. [1 ]
机构：
[1] Ctr Res & Technol Energy, Lab Semicond Nanostruct & Adv Technol LSNTA, Tourist Route Soliman,BP 95, Hammam Lif 2050, Tunisia
[2] Univ Messina, Sci Fis & Sci Terra, Dipto Sci Matemat & Informat, Viale F Stagno dAlcontres 31, I-98166 Messina, Italy
[3] Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm, Gabes 6072, Tunisia
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 699卷
关键词：
Amorphous Si nanoparticles; Porous aluminum; Hydrogenated amorphous silicon; PECVD; Substrate temperature; CHEMICAL-VAPOR-DEPOSITION; HYDROGENATED AMORPHOUS-SILICON; ELECTRICAL-PROPERTIES; MICROSTRUCTURE; SUBSTRATE; THICKNESS; DILUTION; TEMPERATURE; IRRADIATION; STATES;
D O I：
10.1016/j.jallcom.2016.12.440
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hydrogenated amorphous silicon (a-Si:H) films are deposited by PECVD technique, varying the substrate temperature from 100 degrees C to 250 degrees C, on porous anodic aluminum (PAI) layers. A combination of micro Raman, X-ray photoelectron, Fourier transform infrared spectroscopies, atomic force and scanning/ transmission electron microscopies analyses have shown that the optical properties of the a-Si:H films depend on the substrate temperature and mainly on the homogeneous nanoporous structure of the PAl layers on which the a-Si:H films were grown. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：991 / 997
页数：7
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