Orientation dependent band alignment for p-NiO/n-ZnO heterojunctions

被引：19

作者：

Ma, M. J. ^{[1
]}

Lu, B. ^{[1
]}

Zhou, T. T. ^{[1
]}

Ye, Z. Z. ^{[1
]}

Lu, J. G. ^{[1
]}

Pan, X. H. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 16期

基金：

中国国家自然科学基金;

关键词：

SEMICONDUCTORS; SPECTROSCOPY; TEMPERATURE; OFFSETS; EPITAXY;

D O I：

10.1063/1.4803095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolor a-plane and polar c-plane ZnO thin films were prepared on r-plane sapphire and quartz substrates, respectively. The electronic structure of the interface between subsequently fabricated NiO/ZnO heterojunctions has been investigated by x-ray photoelectron spectroscopy measurements and the band offsets are determined together with information yielded from UV-vis transition spectra. It is found that a type-II band alignment forms at the interface for both the samples. The revealed ZnO-orientation dependent band offsets are analyzed and are attributed mainly due to the variations in internal electric field arose from spontaneous polarization effect. The accurate determination of the band alignment is important for the design and application of NiO/ZnO based hybrid devices. (C) 2013 AIP Publishing LLC.

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页数：4

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