III-nitride light-emitting diode with embedded photonic crystals

被引：15
|
作者：
Li, K. H. [1 ]
Zang, K. Y. [2 ]
Chua, S. J. [2 ]
Choi, H. W. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Inst Mat Res & Engn, Singapore, Singapore
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期
关键词：
HIGH EXTRACTION EFFICIENCY; QUANTUM-WELLS; BULK GAN;
D O I：
10.1063/1.4804678
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. (C) 2013 AIP Publishing LLC.
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页数：4
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