Microstructural characterization of Ni-based self-fluxing alloy after selective surface-engineering using diode laser

被引:12
作者
Chun, Eun-Joon [1 ]
Park, Changkyoo [1 ]
Nishikawa, Hiroshi [2 ]
Kim, Min-Su [2 ]
机构
[1] Korea Inst Machinery & Mat, Busan Machinery Res Ctr, 48,Mieumsandan 5 Ro 41Beon Gil, Busan 46744, South Korea
[2] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
关键词
Thermal spraying; Self-fluxing alloy; Homogenization; Diode laser; Microstructure; SOLIDIFICATION CRACKING SUSCEPTIBILITY; POST-HEAT-TREATMENT; FATIGUE BEHAVIOR; POWER; COATINGS; HARDNESS; NICKEL;
D O I
10.1016/j.apsusc.2018.02.226
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The microstructural characterization of thermal-sprayed Ni-based self-fluxing alloy (Metco-16C (R)) after laser-assisted homogenization treatment was performed. To this end, a high-power diode laser system was used. This supported the real-time control of the target homogenization temperature at the substrate surface. Non-homogeneities of the macrosegregation of certain elements (C and Cu) and the local concentration of Cr-based carbides and borides in certain regions in the as-sprayed state could be enhanced with the application of homogenization. After homogenization at 1423 K, the hardness of the thermal-sprayed layer was found to have increased by 1280 HV from the as-sprayed state (750 HV). At this homogenization temperature, the microstructure of the thermal-sprayed layer consisted of a lamellar structuring of the matrix phase (austenite and Ni3Si) with fine (<5 mu m) carbides and borides (the rod-like phase of Cr5B3, the lumpy phase of M23C6, and the extra-fine phase of M7C3). Despite the formation of several kinds of carbides and borides during homogenization at 1473 K, the lowest hardness level was found to be less than that of the as-sprayed state, because of the liquid-state homogenization treatment without formation of lamellar structuring between austenite and Ni3Si. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:726 / 735
页数:10
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