Scintillation properties of Fe and Cr doped Bi4Si3O12 crystals

被引：0

作者：

Fei, YT ^{[1
]}

Sun, RY ^{[1
]}

Fan, SJ ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 1999年 / 14卷 / 03期

关键词：

Bridgman method; BSO and Fe; Cr doped BSO crystals; scintillation properties;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High optical quality Bi4Si3O12 and Fe, Cr doped Bi4Si3O12 Single crystals with the size 20mm x 20mm x 100mm were grown by the vertical Bridgman method. After measuring their transmission spectra, relative light output, FWHM energy resolution, excitation spectra and emission spectra, the laws of the doped effects on scintillation properties of Bi4Si4O12 crystals were summarized and explained.

引用

页码：357 / 362

页数：6

共 9 条

[1] DURIF A, 1982, CR ACAD SCI II, V295, P555
[2] FAN SJ, 1995, 11 INT C CRYST GROWT, P30
[3] UBER WISMUTOXIDE .4. BEITRAG ZU DEN BINAREN SYSTEMEN DES BI2O3 MIT SIO2, GEO2 UND SNO2
GATTOW, G
FRICKE, H
[J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1963, 324 (5-6): : 287 - 296
[4] SINGLE-CRYSTALS FOR RADIATION DETECTORS
ISHII, M
KOBAYASHI, M
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1991, 23 : 245 - 311
[5] ISHII M, 1997, P INT C IN SCINT THE, P368
[6] ISHII M, 1992, HEAV SCINT SCI IND A, P427
[7] Bismuth silicate Bi4Si3O12, a faster scintillator than bismuth germanate Bi4Ge3O12
Kobayashi, M
Ishii, M
Harada, K
Yamaga, I
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 372 (1-2): : 45 - 50
[8] BISMUTH SILICATE AS A SCINTILLATING MATERIAL FOR ELECTROMAGNETIC SHOWER DETECTORS
KOBAYASHI, M
MORIMOTO, K
YOSHIDA, H
SUGIMOTO, S
KOBAYASHI, S
CHIBA, M
ISHII, M
AKIYAMA, S
ISHIBASHI, H
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 205 (1-2): : 133 - 136
[9] Philipsborn H.V., 1971, J, Cryst. Growth, V11, P348

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