IBIC analysis of SiC detectors developed for fusion applications

被引：8

作者：

Jimenez-Ramos, M. C. ^{[1
]}

Garcia Lopez, J. ^{[1
,2
]}

Garcia Osuna, A. ^{[1
]}

Rodriguez-Ramos, M. ^{[1
]}

Villalpando Barroso, A. ^{[1
]}

Garcia Munoz, M. ^{[1
,2
]}

Andrade, E. ^{[3
]}

Pellegrini, G. ^{[4
]}

Otero Ugobono, S. ^{[4
]}

Godignon, P. ^{[4
]}

Rafi, J. M. ^{[4
]}

Rius, G. ^{[4
]}

机构：

[1] Univ Seville, Ctr Nacl Aceleradores, CSIC, Seville, Spain

[2] Univ Seville, Dept Atom Mol & Nucl Phys, Seville, Spain

[3] Univ Nacl Autonoma Mexico, Inst Fis, Ciudad De Mexico, Mexico

[4] IMB CNM CSIC, Inst Microelect Barcelona, Ctr Nacl Microelect, Barcelona, Spain

来源：

RADIATION PHYSICS AND CHEMISTRY | 2020年 / 177卷

关键词：

Radiation damage; SiC detectors; Ion beam induced charge; Charge collection efficiency; Minority carrier lifetime; CHARGE COLLECTION EFFICIENCY; SILICON-CARBIDE DETECTORS; 4H-SIC SCHOTTKY DIODES; RADIATION TOLERANCE; DEGRADATION; ELECTRONS;

D O I：

10.1016/j.radphyschem.2020.109100

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A nuclear microprobe was used to locally irradiate micrometer-sized regions of the detector with 3.5 MeV He ions to fluences from 5 x 10(9) to 5 x 10(11) cm(-2). Ion Beam Induced Charge (IBIC) microscopy was employed to study its degradation in Charge Collection Efficiency (CCE) and energy resolution after irradiation. At high reverse-bias voltages, both parameters remain practically unaffected for fluences up to 1x10(11) cm(-2), while a significant deterioration of the spectroscopic performance was observed above 3 x 10(11) cm(-2). A theoretical drift-diffusion model, in combination with Shockley-Read-Hall recombination statistics, was used to obtain the holes lifetime from the fitting of the experimental CCE values measured at different reverse voltages. Holes lifetime was found to strongly decrease with increasing particle fluence, changing from 57 ns in pristine detectors to 0.2 ns after irradiation with a fluence of 1 x 10(11) cm(-2).

引用

页数：8

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