Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals

被引：146
作者：
Zhou, Huanping [1 ,2 ]
Song, Tze-Bin [1 ,2 ]
Hsu, Wan-Ching [1 ,2 ]
Luo, Song [1 ,2 ]
Ye, Shenglin [1 ,2 ]
Duan, Hsin-Sheng [1 ,2 ]
Hsu, Chia-Jung [1 ,2 ]
Yang, Wenbing [1 ,2 ]
Yang, Yang [1 ,2 ]
机构：
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2013年 / 135卷 / 43期
基金：
美国国家科学基金会;
关键词：
FILM SOLAR-CELLS; ELECTRICAL-PROPERTIES; QUANTUM DOTS; EFFICIENCY; POLYCRYSTALLINE; NA;
D O I：
10.1021/ja407202u
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An effective defect passivation route has been demonstrated in the rapidly growing Cu2ZnSn(S,Se)(4) (CZTSSe) solar cell device system by using Cu2ZnSnS4:Na (CZTS:Na) nanocrystals precursors. CZTS:Na nanocrystals are obtained by sequentially preparing CZTS nanocrystals and surface decorating of Na species, while retaining the kesterite CZTS phase. The exclusive surface presence of amorphous Na species is proved by X-ray photoluminescence spectrum and transmission electron microscopy. With Na-free glasses as the substrate, CZTS:Na nanocrystal-based solar cell device shows 50% enhancement of device performance (similar to 6%) than that of unpassivated CZTS nanocrystal-based device (similar to 4%). The enhanced electrical performance is closely related to the increased carrier concentration and elongated minority carrier lifetime, induced by defect passivation. Solution incorporation of extrinsic additives into the nanocrystals and the corresponding film enables a facile, quantitative, and versatile approach to tune the defect property of materials for future optoelectronic applications.
引用
收藏
页码：15998 / 16001
页数：4
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