Nonalloyed ohmic formation for p-type AlGaN with p-type GaN capping layers using ohmic recessed technique

被引:5
作者
Lin, YJ [1 ]
机构
[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 1-3期
关键词
AlGaN; ohmic contact; GaN; specific contact resistance; two-dimensional hole gas;
D O I
10.1143/JJAP.45.L86
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, we report that the p-type GaN (p-GaN) capping layer grown on top of p-type AlGaN (p-AlGaN) and the fabrication of recessed channels are used to demonstrate a new type of nonalloyed ohmic contact. Because the p-GaN layer grown on p-AlGaN led to the formation of spontaneous polarization fields in p-GaN and the lower band bending of p-AlGaN resulting in the formation of a two-dimensional hole gas (2DHG). As a result, we deduce that holes can be easily injected into the p-AlGaN layer through recessed channels and a 2DHG channel, which results in nonalloyed ohmic formation.
引用
收藏
页码:L86 / L88
页数:3
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