Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template

被引：7
作者：
Kuo, Cheng-Huang [1 ]
Chang, Li-Chuan [1 ]
Chou, Hsiu-Mei [2 ]
机构：
[1] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan 71150, Taiwan
[2] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 07期
关键词：
Current spreading; InGaN/GaN; light-emitting diode (LED); nano; SI-DOPED GAN;
D O I：
10.1109/LPT.2012.2185043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
引用
收藏
页码：608 / 610
页数：3
相关论文
共 50 条
  • [41] Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching
    Gao, Haiyong
    Yan, Fawang
    Zhang, Yang
    Li, Jinmin
    Zeng, Yiping
    Wang, Guohong
    Yang, Fuhua
    SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841
  • [42] Laser Liftoff GaN Thin-Film Photonic Crystal GaN-Based Light-Emitting Diodes
    Cho, Hyun Kyong
    Kim, Sun-Kyung
    Bae, Duk Kyu
    Kang, Bong-Cheol
    Lee, Jeong Soo
    Lee, Yong-Hee
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 2096 - 2098
  • [43] A single InGaN/GaN multiple quantum wells microwire light-emitting diode with high efficiency current injection and spreading
    Song, Weidong
    Chen, Hang
    Luo, Xingjun
    Sun, Yiming
    Wang, Xingfu
    Wang, Hu
    Guo, Dexiao
    Qi, Mingyue
    Li, Guang
    Li, Shuti
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 791 : 1241 - 1247
  • [44] Interactions of Diffraction Modes Contributed From Surface Photonic Crystals and Nanoholes in a GaN-Based Light-Emitting Diode
    Wang, Szu-Chieh
    Cheng, Yun-Wei
    Yin, Yu-Feng
    Chen, Liang-Yi
    Su, Liang-Yu
    Hung, Yen-Jen
    Huang, Jian Jang
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2011, 29 (24) : 3772 - 3776
  • [45] Enhancement in Light Extraction of GaN-Based Light-Emitting Diodes With High Reflectivity Electrodes
    Su, Yan-Kuin
    Chen, Kuan Chun
    Lin, Chun-Liang
    Hsu, Hsiao-Chiu
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (23) : 1793 - 1795
  • [46] Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts
    Yao, Y.
    Jin, C.
    Dong, Z.
    Sun, Z.
    Huang, S. M.
    DISPLAYS, 2007, 28 (03) : 129 - 132
  • [47] GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region
    Chen, P. H.
    Chang, Li Chuan
    Tsai, C. H.
    Lee, Y. C.
    Lai, Wei-Chih
    Wu, Mount-Learn
    Kuo, Cheng-Huang
    Sheu, Jinn-Kong
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (07) : 1066 - 1071
  • [48] Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts
    Yao, Y.
    Jin, C. C.
    Dong, Z.
    Sun, Z.
    Huang, S. M.
    AD'07: PROCEEDINGS OF ASIA DISPLAY 2007, VOLS 1 AND 2, 2007, : 1633 - 1637
  • [49] GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer
    Chang, Shoou-Jinn
    Lu, Lucent
    Lin, Yu-Yao
    Li, Shuguang
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (11): : 910 - 914
  • [50] GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
    Su, Yan-Kuin
    Chen, Jian-Jhong
    Lin, Chuing-Liang
    Chen, Shi-Ming
    Li, Wen-Liang
    Kao, Chien-Chih
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (08) : 6706 - 6708
12345