Slab waveguides and nanoscale patterning of pulsed laser-deposited Ge0.2Se0.8 chalcogenide films

被引：21

作者：

Liu, W. C. ^{[1
,3
]}

Hoffman, G. ^{[2
]}

Zhou, W. ^{[1
]}

Reano, R. M. ^{[2
]}

Boolchand, P. ^{[4
]}

Sooryakumar, R. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon 852, Hong Kong, Peoples R China

[4] Univ Cincinnati, Dept Elect Comp Engn & Comp Sci, Cincinnati, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2965124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar slab waveguides were fabricated by pulsed laser deposition from GexSe1-x glass compounds with composition (x similar to 0.2) that lies very close to the floppy to rigid stiffness transition. These high quality active structures, which were deposited on SiO2 cladding layers above silicon substrates, support several transverse-electric (TE) modes, and a loss of 0.24 dB/cm for the TE0 mode was measured at 632.8 nm wavelength. The ability to exploit electron beam writing at these special Ge in Se compositions to create nanoscale surface motifs are promising advances to create unique miniature optical processing devices. (C) 2008 American Institute of Physics.

引用

页数：3

共 25 条

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