Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs

被引：76

作者：

Hong, Young Joon ^{[1
,2
,7
]}

Yang, Jae Won ^{[3
]}

Lee, Wi Hyoung ^{[4
,5
,6
]}

Ruoff, Rodney S. ^{[5
,6
]}

Kim, Kwang S. ^{[3
]}

Fukui, Takashi ^{[7
]}

机构：

[1] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Graphene Res Inst, Seoul 143747, South Korea

[2] Sejong Univ, Hybrid Mat Res Ctr, Seoul 143747, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Dept Chem, Ctr Superfunct Mat, Pohang 790784, South Korea

[4] Konkuk Univ, Dept Organ & Nano Syst Engn, Seoul 143701, South Korea

[5] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[6] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

[7] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 47期

基金：

奥地利科学基金会; 新加坡国家研究基金会; 日本学术振兴会;

关键词：

van der Waals epitaxy; double heterostructures; graphene; metal-organic vapor-phase epitaxy; indium arsenide; NANOWIRE ARRAYS; HIGH-QUALITY; GROWTH; FILMS; NANOSTRUCTURES; POLYTYPISM; BINDING; SURFACE; ENERGY; MODEL;

D O I：

10.1002/adma.201302312

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：6847 / 6853

页数：7

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