Application of silicon improves salt tolerance through ameliorating osmotic and ionic stresses in the seedling of Sorghum bicolor

被引:157
|
作者
Yin, Lina [1 ,2 ]
Wang, Shiwen [1 ,3 ]
Li, Jianye [3 ]
Tanaka, Kiyoshi [2 ]
Oka, Mariko [2 ]
机构
[1] Northwest A&F Univ, State Key Lab Soil Eros & Dryland Farming Loess P, Inst Soil & Water Conservat, Yangling 712100, Shaanxi, Peoples R China
[2] Tottori Univ, Fac Agr, Minami Ku, Tottori 6808553, Japan
[3] Northwest A&F Univ, Coll Nat Resources & Environm, Yangling 712100, Shaanxi, Peoples R China
基金
中国科学院西部之光基金; 中国国家自然科学基金;
关键词
Ionic stress; Osmotic stress; Salt tolerance; Silicon; Sugar; Water potential; REDUCES SODIUM UPTAKE; WATER-DEFICIT STRESS; ORYZA-SATIVA L; SALINITY; MECHANISMS; GROWTH; LEAVES; PROLINE; PHOTOSYNTHESIS; ACCUMULATION;
D O I
10.1007/s11738-013-1343-5
中图分类号
Q94 [植物学];
学科分类号
071001 ;
摘要
Silicon has been widely reported to have a beneficial effect on improving plant tolerance to biotic and abiotic stresses. However, the mechanisms of silicon in mediating stress responses are still poorly understood. Sorghum is classified as a silicon accumulator and is relatively sensitive to salt stress. In this study, we investigated the short-term application of silicon on growth, osmotic adjustment and ion accumulation in sorghum (Sorghum bicolor L. Moench) under salt stress. The application of silicon alone had no effects upon sorghum growth, while it partly reversed the salt-induced reduction in plant growth and photosynthesis. Meanwhile, the osmotic potential was lower and the turgor pressure was higher than that without silicon application under salt stress. The osmolytes, the sucrose and fructose levels, but not the proline, were significantly increased, as well as Na+ concentration was decreased in silicon-treated plants under salt stress. These results suggest that the beneficial effects of silicon on improving salt tolerance under short-term treatment are attributed to the alleviating of salt-induced osmotic stress and as well as ionic stress simultaneously.
引用
收藏
页码:3099 / 3107
页数:9
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