Computational simulations of high intensity x-ray matter interaction

被引:37
作者
London, RA [1 ]
Bionta, RM [1 ]
Tatchyn, RO [1 ]
Roesler, S [1 ]
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源
OPTICS FOR FOURTH-GENERATION X-RAY SOURCES | 2001年 / 4500卷
关键词
x-ray lasers; free-electron lasers; x-ray optics; computer simulation;
D O I
10.1117/12.452958
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Free electron lasers have the promise of producing extremely high-intensity short pulses of coherent, monochromatic radiation in the 1-10 keV energy range. For example, the Linac Coherent Light Source at Stanford is being designed to produce an output intensity of 2x10(14) W/cm(2) in a 230 fs pulse. These sources will open the door to many novel research studies. However, the intense x-ray pulses may damage the optical components necessary for studying and controlling the output. At the full output intensity, the dose to optical components at normal incidence ranges from 1-10 eV/atom for low-Z materials (Z<14) at photon energies of I keV. It is important to have an understanding of the effects of such high doses in order to specify the composition, placement, and orientation of optical components, such as mirrors and monochromators. Doses of 10 eV/atom are certainly unacceptable since they will lead to ablation of the surface of the optical components. However, it is not precisely known what the damage thresholds are for the materials being considered for optical components for x-ray free electron lasers. In this paper, we present analytic estimates and computational simulations of the effects of high-intensity x-ray pulses on materials. We outline guidelines for the maximum dose to various materials and discuss implications for the design of optical components.
引用
收藏
页码:51 / 62
页数:12
相关论文
共 17 条
  • [1] Allen RE, 2001, SEMICONDUCT SEMIMET, V67, P315
  • [2] Bionta R.M., 2000, UCRLID137222 LAWR LI
  • [3] Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction
    Cavalleri, A
    Siders, CW
    Brown, FLH
    Leitner, DM
    Tóth, C
    Squier, JA
    Barty, CPJ
    Wilson, KR
    Sokolowski-Tinten, K
    von Hoegen, MH
    von der Linde, D
    Kammler, M
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (03) : 586 - 589
  • [4] Laser-induced melting of silicon: A tight-binding molecular dynamics simulation
    Gambirasio, A
    Bernasconi, M
    Colombo, L
    [J]. PHYSICAL REVIEW B, 2000, 61 (12): : 8233 - 8237
  • [5] THE SPALL STRENGTH OF CONDENSED MATTER
    GRADY, DE
    [J]. JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 1988, 36 (03) : 353 - +
  • [6] X-RAY INTERACTIONS - PHOTOABSORPTION, SCATTERING, TRANSMISSION, AND REFLECTION AT E=50-30,000 EV, Z=1-92
    HENKE, BL
    GULLIKSON, EM
    DAVIS, JC
    [J]. ATOMIC DATA AND NUCLEAR DATA TABLES, 1993, 54 (02) : 181 - 342
  • [7] Theory for laser-induced ultrafast phase transitions in carbon
    Jeschke, HO
    Garcia, ME
    Bennemann, KH
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1): : S49 - S53
  • [8] ENERGY DEPOSITION BY ELECTRON BEAMS AND DELTA RAYS
    KOBETICH, EJ
    KATZ, R
    [J]. PHYSICAL REVIEW, 1968, 170 (02): : 391 - &
  • [9] Time-resolved X-ray diffraction from coherent phonons during a laser-induced phase transition
    Lindenberg, AM
    Kang, I
    Johnson, SL
    Missalla, T
    Heimann, PA
    Chang, Z
    Larsson, J
    Bucksbaum, PH
    Kapteyn, HC
    Padmore, HA
    Lee, RW
    Wark, JS
    Falcone, RW
    [J]. PHYSICAL REVIEW LETTERS, 2000, 84 (01) : 111 - 114
  • [10] Experimental measurements of the strength of metals approaching the theoretical limit predicted by the equation of state
    Moshe, E
    Eliezer, S
    Henis, Z
    Werdiger, M
    Dekel, E
    Horovitz, Y
    Maman, S
    Goldberg, IB
    Eliezer, D
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1555 - 1557