Effect of insulators on the power consumption and the oxygen content of Si ingots in Czochralski growth

被引：1

作者：

Shin, Jong-Sik ^{[1
]}

Choi, Wang-Ki ^{[1
]}

Kim, Ki-Young ^{[1
]}

机构：

[1] Korea Univ Technol & Educ, Sch Energy Mat & Chem Engn, Chungnam 330708, South Korea

来源：

MATERIAL DESIGN, PROCESSING AND APPLICATIONS, PARTS 1-4 | 2013年 / 690-693卷

关键词：

Czochralski silicon growth; power consumption; oxygen content; interface shape;

D O I：

10.4028/www.scientific.net/AMR.690-693.2969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of insulators in a Czochralski furnace on the power consumption and the oxygen content in the melts as well as in the Si ingots was studied without considering a radiation shield. The top insulator showed better results than the other two insulators for the power consumption and Si melt temperature. The interface at the center of the melt descended in the all conditions of installing the insulators, and all interfaces were concave down. The oxygen content in the Si crystal decreased as the thickness of insulators was decreased for the top and top-side insulators, while increased for the bottom insulator.

引用

页码：2969 / 2972

页数：4

共 6 条

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