Advantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer

被引：4

作者：

Wang, Tian-Hu ^{[1
]}

Xu, Jin-Liang ^{[2
]}

机构：

[1] North China Elect Power Univ, Beijing Key Lab New & Renewable Energy, Beijing 102206, Peoples R China

[2] North China Elect Power Univ, Beijing Key Lab Multiphase Flow & Heat Transfer, Beijing 102206, Peoples R China

来源：

OPTIK | 2013年 / 124卷 / 22期

基金：

中国国家自然科学基金;

关键词：

Light-emitting diodes; Efficiency droop; Electron blocking layer; InGaN; EFFICIENCY DROOP; BAND PARAMETERS; POLARIZATION;

D O I：

10.1016/j.ijleo.2013.04.065

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we demonstrate the improved performance of light-emitting diodes (LED) with AlGaInN electron blocking layer (EBL) by inserting a p-type InGaN layer in front of it. The performances of three LED structures with conventional AlGaN EBL, AlGaInN EBL and AlGaInN EBL coupled with an inserted p-type InGaN layer are numerically studied. The output power performance is significantly improved and the efficiency droop could reduce to only 4% when a p-type InGaN layer was inserted in front of the AlGaInN EBL, which is responsible for the reduced electron leakage and enhanced hole injection efficiency, as well as alleviated electrostatic fields in the quantum wells. (C) 2013 Elsevier GmbH. All rights reserved.

引用

收藏

页码：5866 / 5870

页数：5

相关论文

共 25 条

[1] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[2] Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer [J].

Choi, Suk ;

Kim, Hee Jin ;

Kim, Seong-Soo ;

Liu, Jianping ;

Kim, Jeomoh ;

Ryou, Jae-Hyun ;

Dupuis, Russell D. ;

Fischer, Alec M. ;

Ponce, Fernando A. .

APPLIED PHYSICS LETTERS, 2010, 96 (22)

[3] k center dot p method for strained wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

PHYSICAL REVIEW B, 1996, 54 (04) :2491-2504

[4] A band-structure model of strained quantum-well wurtzite semiconductors [J].

Chuang, SL ;

Chang, CS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (03) :252-263

[5] Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures [J].

Fiorentini, V ;

Bernardini, F ;

Ambacher, O .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1204-1206

[6] Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes [J].

Han, Sang-Heon ;

Lee, Dong-Yul ;

Lee, Sang-Jun ;

Cho, Chu-Young ;

Kwon, Min-Ki ;

Lee, S. P. ;

Noh, D. Y. ;

Kim, Dong-Joon ;

Kim, Yong Chun ;

Park, Seong-Ju .

APPLIED PHYSICS LETTERS, 2009, 94 (23)

[7] Origin of efficiency droop in GaN-based light-emitting diodes [J].

Kim, Min-Ho ;

Schubert, Martin F. ;

Dai, Qi ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Piprek, Joachim ;

Park, Yongjo .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[8] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

[9] Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer [J].

Kuo, Yen-Kuang ;

Chang, Jih-Yuan ;

Tsai, Miao-Chan .

OPTICS LETTERS, 2010, 35 (19) :3285-3287

[10] Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer [J].

Kuo, Yen-Kuang ;

Tsai, Miao-Chan ;

Yen, Sheng-Horng .

OPTICS COMMUNICATIONS, 2009, 282 (21) :4252-4255