The 2D-to-3D geometry hopping in small boron clusters: The charge effect

被引:87
作者
Hung Tan Pham [1 ]
Long Van Duong [1 ]
Buu Quoc Pham [1 ]
Minh Tho Nguyen [1 ,2 ]
机构
[1] Quang Trung Software City, Inst Computat Sci & Technol Ho Chi Minh City ICST, Ho Chi Minh City, Vietnam
[2] Univ Louvain, Dept Chem, B-3001 Louvain, Belgium
关键词
B-N; PLANAR; AROMATICITY; TRANSITION; NANOTUBES; ANALOGS;
D O I
10.1016/j.cplett.2013.05.041
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
DFT TPSSh/6-311+G(d) calculations are carried out on a series of 2D and 3D forms of B-n, n = 20, 22 and 24 in different charge states. For a certain size, the relative energy within a pair of two-dimensional quasi-planar (2D) and three-dimensional staggered double-ring (3D) boron cluster isomers may shift the sign as they reach a certain charge state. Specifically, electron addition tends to enhance the stability of the 2D over the corresponding 3D isomer irrespective of the available electrons. Linear correlations between 2D-3D relative energy and net charge are established. Along with 2D-to-3D geometry hopping at critical size, our results suggest a local 2D-3D geometry hopping via critical charge. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:32 / 37
页数:6
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