Localization and interaction effects in ultrathin epitaxial NbN superconducting films

被引:21
作者
Ezaki, S. [1 ]
Makise, K. [2 ]
Shinozaki, B. [1 ]
Odo, T. [1 ]
Asano, T. [1 ]
Terai, H. [2 ]
Yamashita, T. [2 ]
Miki, S. [2 ]
Wang, Z. [2 ]
机构
[1] Kyushu Univ, Dept Phys, Fukuoka 8108560, Japan
[2] Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan
关键词
INSULATOR TRANSITION; TEMPERATURE; RESISTANCE; DETECTOR;
D O I
10.1088/0953-8984/24/47/475702
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
For epitaxial NbN films with thickness d, 2.0 nm <= d <= 20.5 nm, we observed a sharp superconducting transition, for which the transition temperature T-c monotonically decreased with increasing 1/d. Regarding the suppression of T-c, the sheet resistance R-sq dependence of T-c closely fitted the Finkel'stein formula from localization theory, with a reasonable value of the electron mean free path comparable to atomic distance, which was used as a fitting parameter. On the other hand, the critical sheet resistance R-c, at which the superconducting-insulator transition was expected, was approximately one-third of the universal value R-q =h/4e(2) suggested by the dirty boson model for self-duality. It is concluded that T-c depression in the present NbN system is determined by localization theory but not the dirty boson model.
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页数:5
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