Quantum Emitters in Hexagonal Boron Nitride

被引：79
作者：
Aharonovich, Igor [2 ,3 ]
Tetienne, Jean-Philippe [1 ]
Toth, Milos [2 ,3 ]
机构：
[1] RMIT Univ, Sch Sci, Melbourne, Vic 3001, Australia
[2] Univ Technol Sydney, Fac Sci, Sch Math & Phys Sci, Ultimo, NSW 2007, Australia
[3] Univ Technol Sydney, Fac Sci, ARC Ctr Excellence Transformat Meta Opt Syst, Ultimo, NSW 2007, Australia
来源：
NANO LETTERS | 2022年 / 22卷 / 23期
基金：
澳大利亚研究理事会;
关键词：
hexagonal boron nitride; 2D materials; quantum emitters; nanophotonics; SINGLE-PHOTON EMISSION; SPIN DEFECTS; POINT-DEFECTS;
D O I：
10.1021/acs.nanolett.2c03743
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers-a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineer-ing and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
引用
收藏
页码：9227 / 9235
页数：9
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