Field emission properties of ZnO nanowires synthesized by thermal decomposition process

被引：20

作者：

Lin, Chih-Cheng ^{[1
]}

Lin, Wang- Hua ^{[1
]}

Li, Yuan-Yao ^{[1
]}

机构：

[1] Natl Chung Cheng Univ, Dept Chem Engn, Chiayi 621, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 22期

关键词：

D O I：

10.1088/0022-3727/41/22/225411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical ZnO nanowires were uniformly fabricated on a tin-doped indium oxide (ITO) glass substrate by low-temperature thermal decomposition. The morphology and structure of ZnO nanowires were analysed by scanning electron microscopy, x-ray diffraction (XRD) and transmission electron microscopy (TEM). The diameter and length of the ZnO nanowires were about 30-50 nm and 5 mu m, respectively. The XRD and TEM investigations show that the ZnO nanowires were single crystals with growth direction along the c-axis of the crystal plane. The turn-on field of the ZnO nanowires grown at 300 degrees C was found to be about 3.5V mu m(-1) at a current density of 10 mu Acm(-2). The emission current density of the ZnO nanowires grown at 300 degrees C reached 1mAcm(-2) at an applied field of 7.0V mu m(-1).

引用

页数：6

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