Hole transport in boron delta-doped diamond structures

被引：31

作者：

Chicot, G. ^{[1
,2
]}

Thi, T. N. Tran ^{[1
,2
]}

Fiori, A. ^{[1
,2
]}

Jomard, F. ^{[3
]}

Gheeraert, E. ^{[1
,2
]}

Bustarret, E. ^{[1
,2
]}

Pernot, J. ^{[1
,2
]}

机构：

[1] CNRS, Inst Neel, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble 9, France

[3] UVSQ, CNRS, UMR 8635, GEMaC, F-78035 Versailles, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 16期

关键词：

DEPTH RESOLUTION; FILMS; SIMS;

D O I：

10.1063/1.4758994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated experimentally and theoretically over a large temperature range (6K < T < 500 K). The influence of the parallel conduction through the thick buffer layer overgrown on the diamond substrate was shown not to be negligible near room temperature. This could lead to erroneous estimates of the hole mobility in the delta layer. None of the delta-layers studied showed any quantum confinement enhancement of the mobility, even the one which was thinner than 2 nm. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758994]

引用

页数：4

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