A deep understanding of relationship between reverse time and growth of ITO film deposited by direct current pulsed sputtering

被引：6

作者：

Chen, Weichao ^{[1
]}

Sun, Haoting ^{[1
]}

Wang, Hualin ^{[1
]}

Jiang, Weiwei ^{[1
]}

Liu, Shimin ^{[1
]}

Liu, Chaoqian ^{[1
]}

Wang, Nan ^{[1
]}

Cui, Yunxian ^{[1
]}

Chai, Weiping ^{[1
]}

Ding, Wanyu ^{[1
]}

Han, Bing ^{[2
]}

机构：

[1] Dalian Jiaotong Univ, Dalian 116028, Peoples R China

[2] Univ Sci & Technol Liaoning, Liaoning Prov Key Lab Met Equipment & Proc Contro, Anshan 114051, Peoples R China

来源：

MATERIALS LETTERS | 2018年 / 220卷

基金：

中国国家自然科学基金;

关键词：

Indium tin oxide; Thin films; Sputtering; Reverse time; Preferred orientation; Optical and electrical property; DOPED INDIUM OXIDE; THIN-FILM; SUBSTRATE;

D O I：

10.1016/j.matlet.2018.02.129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) film was deposited by the traditional direct current (DC) pulsed magnetron sputtering technology. With the increase of reverse time from 0 to 4.0 mu s, the crystal structure of ITO film changed from the polycrystalline structure without preferred orientation to (1 0 0) preferred orientation. ITO film with (1 0 0) preferred orientation showed the satisfactory optical and electrical properties, such as the band gap in 4.15 eV and carrier concentration in 4.25 x 10(20)/cm(3). Based on DC pulsed voltage waveform, the formation of (1 0 0) preferred orientation, as well as the change of optical and electrical properties of ITO film, were analyzed logically. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：8 / 11

页数：4

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