Influence of depth in helium desorption from cavities induced by 3He implantation in silicon

被引：1

作者：

Delamare, R

Ntsoenzok, E

Labohm, F

van Veen, A

机构：

[1] CNRS, Ctr Etud & Rech Irradiat, FR-45071 Orleans, France

[2] Delft Univ Technol, Interfac Reactor Inst, NL-2629 JB Delft, Netherlands

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷

关键词：

cavities; desorption; helium; implantation; silicon;

D O I：

10.4028/www.scientific.net/SSP.82-84.303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We implanted silicon at different depth with He-3. We used 1.55 MeV helium implantation and aluminum foils in order to obtain implanted depths ranging from 1.1 to 5.6 mum as simulated by TRIM. All these implantation were done with a dose of 5x10(16) He/cm(2). This dose is higher enough to create cavities for all cases studied. The study showed that the desorption speed decreases with the implantation depth. The classical model of helium desorption can no longer be applied. New approaches were developed for the desorption of helium from deeper implantation. In addition, as expected, the activation energy of the desorption is not depth dependent.

引用

收藏

页码：303 / 307

页数：5

相关论文

共 11 条

[1]

ALLEN WR, 1993, MATER RES SOC SYMP P, V279, P433

[2] Cavities and dislocations induced in silicon by MeV He implantation [J].

Godey, S ;

Sauvage, T ;

Ntsoenzok, E ;

Erramli, H ;

Beaufort, MF ;

Barbot, JF ;

Leroy, B .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2158-2161

[3] HELIUM DESORPTION PERMEATION FROM BUBBLES IN SILICON - A NOVEL METHOD OF VOID PRODUCTION [J].

GRIFFIOEN, CC ;

EVANS, JH ;

DEJONG, PC ;

VANVEEN, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (03) :417-420

[4]

GRISOLIA J, 2001, MRS SPRING M SAN FRA

[5] DIFFUSION OF IMPLANTED HELIUM IN SI AND SIO2 [J].

JUNG, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4) :362-365

[6] Helium bubbles in silicon: Study of the residual helium content using elastic recoil detection analysis [J].

Kaschny, JR ;

Fichtner, PFP ;

Muecklich, A ;

Kreissig, U ;

Yankov, RA ;

Skorupa, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :583-586

[7] Helium induced cavities in silicon: Their formation, microstructure and gettering ability [J].

Kaschny, JR ;

Fichtner, PFP ;

Muecklich, A ;

Kreissig, U ;

Yankov, RA ;

Koegler, R ;

Danilin, AB ;

Skorupa, W .

DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 :451-456

[8] Gettering of iron to implantation induced cavities and oxygen precipitates in silicon [J].

McHugo, SA ;

Weber, ER ;

Myers, SM ;

Petersen, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (04) :1400-1405

[9]

MYERS SM, 1994, MATER SCI FORUM, V143-, P1635, DOI 10.4028/www.scientific.net/MSF.143-147.1635

[10] Transport and reactions of gold in silicon containing cavities [J].

Myers, SM ;

Petersen, GA .

PHYSICAL REVIEW B, 1998, 57 (12) :7015-7026