An ultra-wideband 0.18μm SiGeBiCMOS LNA for 3.1 GHz to 10.6 GHz wireless receivers

被引：0

作者：

Xie, Haolu ^{[1
]}

Wang, Albert ^{[1
]}

机构：

[1] IIT, Dept ECE, Chicago, IL 60616 USA

来源：

2005 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES (ECWT), CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra wideband (UWB) radio emerges as a very promising wireless communication technology due to its many advantages: i.e., 7.5GHz spectrum bandwidth, very high data rate, very low power consumption, etc. This paper presents a fully integrated 3.1-10.6GHz low-noise amplifier (LNA) designed for UWB applications. The LNA uses shunt-series feedback topology architecture to achieve desirable ultra broadband gain and noise performance. The LNA is implemented in a commercial 0.18 mu m SiGe BiCMOS process and the measured specifications are: an adequate ultra broadband gain of 17.4dB-7.1dB, a low noise figure (NF) of 3.2dB-5.5dB across 3.1-10.6GHz bandwidth, a very low DC power consumption of less than 10mW at 3V supply, S11 of less than -6dB, and S22 of less than -5dB.

引用

页码：145 / 148

页数：4

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