Rear-side passivation characteristics of Si-rich SINx for various Local Back Contact solar cells

被引：11

作者：

Balaji, Nagarajan ^{[1
]}

Park, Cheolmin ^{[1
]}

Lee, Yongwoo ^{[2
]}

Jung, Sungwook ^{[1
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon, South Korea

[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon, South Korea

来源：

VACUUM | 2013年 / 96卷

关键词：

Rear surface passivation; SiNx; Solar cell; Photolithography; Local back contact; Low temperature process; SILICON-NITRIDE; SURFACE RECOMBINATION; BULK;

D O I：

10.1016/j.vacuum.2013.03.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper focuses on two main challenges: (i) to achieve a low surface recombination velocity and (ii) the quantitative control of the positive charges contained in the rear SiNx by varying the refractive index (n). We adopted a Si-rich SiNx film with a relatively thin thickness to control the fixed charge density (Q(f)) from 2.74 x 10(12) to 1.63 x 10(12)/cm(2) and flat-band voltage (V-FB) is shifted from -2.53 to -1.41 V. A rear side recombination velocity (S-rear) and implied open circuit voltage (iV(oc)) was achieved 30 cm/s and 630 mV respectively after forming gas anneal (FGA) treatment. The low temperature processed LBC solar cell fabricated with photolithographic contacts exhibits V-oc of 647 mV, and efficiency of 19.3%. The laser fired cell exhibits V-oc of 637 mV, and efficiency of 19.0%. (c) 2013 Elsevier Ltd. All rights reserved.

引用

页码：69 / 72

页数：4

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