Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging

被引：24

作者：

Kawahara, Chihiro ^{[1
]}

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 02期

基金：

日本学术振兴会;

关键词：

SILICON-CARBIDE; EPILAYERS; CRYSTALS; DEFECTS; GROWTH; DIODES; KV;

D O I：

10.7567/JJAP.53.020304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dislocations in n- and p-type substrates as well as in epitaxial layers (epilayers) were clearly identified using a photoluminescence (PL) imaging technique. Dislocations in epilayers show large/small bright spots or lines in infrared PL images, which correspond to threading screw/edge dislocations (TSDs/TEDs) or basal plane dislocations (BPDs), respectively. In contrast, dislocations in substrates exhibit large/small dark spots or dark lines in infrared PL images, corresponding to TSDs/TEDs or BPDs, respectively. These different features (bright/dark contrast) of dislocations may originate from the different densities of point defects or impurities. (C) 2014 The Japan Society of Applied Physics

引用

页数：3

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