Numerical Study of the Exciton-light Coupling in Quantum Wells

被引:0
|
作者
Belov, P. A. [1 ]
Khramtsov, E. S. [1 ]
Grigoryev, P. S. [1 ]
Ignatiev, I. V. [1 ]
机构
[1] St Petersburg State Univ, St Petersburg, Russia
关键词
OSCILLATOR-STRENGTH; BINDING-ENERGY; SEMICONDUCTORS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The exciton-light coupling is an important characteristic quantitatively described by the radiative decay rate. Recent experimental studies of the radiative decay rate for high-quality quantum wells show a variance of the experimental data especially for narrow quantum wells. Therefore, the theoretical and numerical studies of the exciton-light coupling as an overlap of the light wave and the exciton wave function are of significant interest. In this paper, we present the radiative decay rates obtained for excitons in the GaAs-based quantum wells of various widths from 1 nm up to 100 nm. The exciton wave function is calculated by the direct numerical solution of the three-dimensional Schrodinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the finite-difference scheme. The numerical results are compared with the experimental data extracted from the reflectance spectroscopy measurements for high-quality GaAs/AlGaAs and InGaAs/GaAs heterostructures.
引用
收藏
页码:258 / 262
页数:5
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