Effect of filament biasing on nanocrystalline-Si films deposited by hot wire chemical vapor deposition

被引：1

作者：

Swain, Bibhu P. ^{[1
]}

Swain, Bhabani S. ^{[1
]}

Yang, Seung M. ^{[1
]}

Hwang, Nong M. ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Natl Res Lab Charged Nanoparticles, Seoul 151742, South Korea

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 11期

关键词：

Raman spectroscopy; XPS; FESEM; HWCVD; POLYCRYSTALLINE SILICON; STRUCTURAL-PROPERTIES; NUCLEATION; DIAMOND; CVD;

D O I：

10.1016/j.apsusc.2009.01.061

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanocrystalline silicon (nc-Si) films were deposited by hot wire chemical vapor deposition with applying positive or negative. lament biases. These films were characterized by Raman spectroscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Plasmon loss of the Si(2p) band region was shifted to higher energy due to dielectric changes with applied. lament biases from negative to positive voltage. A semi-quantitative study of the valence band structure was employed to analyze the bias effect of the valance band in nc-Si networks. Nc-Si with a positive. lament bias shows better microstructural properties than those with a negative bias and without biasing nc-Si films. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6033 / 6037

页数：5

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