Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

被引：4923

作者：

Reina, Alfonso ^{[2
]}

Jia, Xiaoting ^{[2
]}

Ho, John ^{[1
]}

Nezich, Daniel ^{[3
]}

Son, Hyungbin ^{[1
]}

Bulovic, Vladimir ^{[1
]}

Dresselhaus, Mildred S. ^{[1
,3
]}

Kong, Jing ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

基金：

美国国家科学基金会;

关键词：

SILVER ATOMS; GRAPHITE; MONOLAYER; NICKEL; PHASE; GAS; ADSORPTION; DEVICES; PT(111);

D O I：

10.1021/nl801827v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work we present a low cost and scalable technique, via ambient pressure chemical vapor deposition (CVD) on polycrystalline Ni films, to fabricate large area (similar to cm(2)) films of single- to few-layer graphene and to transfer the films to nonspecific substrates. These films consist of regions of 1 to similar to 12 graphene layers. Single- or bilayer regions can be up to 20 mu m in lateral size. The films are continuous over the entire area and can be patterned lithographically or by prepatterning the underlying Ni film. The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.

引用

页码：30 / 35

页数：6

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