Effect of scattering from localized surface plasmon resonance on improving the luminescence efficiency of silicon nitride light-emitting devices

被引：1
作者：
Wang, Feng [1 ]
Ren, Changrui [1 ]
Li, Dongsheng [1 ]
Yang, Deren [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF NANOPARTICLE RESEARCH | 2013年 / 15卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Localized surface plasmon resonance; Silver nanostructures; Silicon-rich silicon nitride; Light-emitting devices; Scattering; INGAN QUANTUM-WELLS; EXTRACTION EFFICIENCY; ENHANCEMENT; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; DIODES; INJECTION; RATIOS; DOTS; SINX;
D O I：
10.1007/s11051-013-1419-6
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We demonstrate the localized surface plasmon resonance enhanced silicon-rich silicon nitride based light-emitting devices by embedding the silver nanostructures between the silicon substrate and luminescent matrix. An about 30 times enhancement of external quantum efficiency is achieved by these inserted silver nanostructures. We attribute this distinct enhancement mainly to the improved backscattering and carrier injection by the addition of silver nanostructures. The coupling between localized surface plasmons and excitons as well as the increase of light extraction via the surface roughening of ITO electrode also contributes to the enhancement of electroluminescence intensity and its efficiency.
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页数：7
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