Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

被引：7

作者：

Blaser, Cedric ^{[1
]}

Esposito, Vincent ^{[1
]}

Paruch, Patrycja ^{[1
]}

机构：

[1] Univ Geneva, DPMC MaNEP, CH-1211 Geneva 4, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期

基金：

瑞士国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILMS; MEMORY; SUPERCONDUCTIVITY; INTERFERENCE; FLUCTUATIONS; MOBILITY;

D O I：

10.1063/1.4809596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O-3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of the ferroelectric field effect. For applications, it is therefore crucial to maximize the quality of the ferroelectric film and the interface with the carbon nanotube to take full advantage of the switchable polarization. (C) 2013 AIP Publishing LLC.

引用

页数：5

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