Topology of electronic charge density and energetics of planar faults in fcc metals

被引:76
作者
Kioussis, N [1 ]
Herbranson, M
Collins, E
Eberhart, ME
机构
[1] Calif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
[2] Colorado Sch Mines, Dept Chem & Geochem, Golden, CO 80401 USA
关键词
D O I
10.1103/PhysRevLett.88.125501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using ab initio calculations we have studied the energetics and the evolution of the electronic charge density with shear in three fcc metals exhibiting different deformation properties, aluminum, silver, and iridium. The charge redistribution described by the change in character of specific charge density critical points (cps), is ascertained from the values of the charge density, rho(0), and its three principal curvatures, rho(parallel toparallel to), rho(hh), and rho(vv), respectively. The change in character of cps correlates with the energetics. For all three metals, rho(hh) vanishes near the unstable stacking configuration. The symmetry or asymmetry of the charge redistribution, measured by rho(hh)/rho(vv) may be an important factor determining stacking fault energies.
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页数:4
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