Enhanced room temperature ferromagnetism in hydrogenated Zn0.98Mn0.02O

被引：4
|
作者：
Zhang, Hua [1 ]
Qin, Sai [1 ]
Cao, Yanqiang [2 ]
Yang, Zaixing [3 ]
Si, Lifang [1 ]
Zhong, Wei [3 ]
Wu, Di [2 ]
Xu, Mingxiang [1 ]
Xu, Qingyu [1 ,4 ]
机构：
[1] Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210008, Jiangsu, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210008, Jiangsu, Peoples R China
[4] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Jiangsu, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2013年 / 271卷
基金：
美国国家科学基金会; 中国国家自然科学基金;
关键词：
Diluted magnetic semiconductor; ZnO; Hydrogenation; Ferromagnetism; MN-DOPED ZNO; MAGNETIC-PROPERTIES; SEMICONDUCTORS;
D O I：
10.1016/j.apsusc.2013.02.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
After annealing in H-2 atmosphere at 500 degrees C for 2 h, enhanced room temperature ferromagnetism has been observed in the paramagnetic Zn0.98Mn0.02O powders synthesized by sol-gel method. Mn ions in interstitial sites have been clearly resolved by Raman measurement in the as-prepared Zn0.98Mn0.02O powders and those annealed in Ar and air, while hydrogenation facilitates the interstitial Mn ions to substitute the Zn sites. The structural characterizations have confirmed the incorporation of the interstitial H and excluded the ferromagnetic contribution of O vacancies. Our results clearly demonstrate the ferromagnetic mediation between the neighboring substituted Mn2+ ions by the interstitial H ions. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：421 / 423
页数：3
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