Extremely low resistivity tungsten for advanced semiconductor devices

被引：0

作者：

Huang, TH ^{[1
]}

Wu, CM ^{[1
]}

Chang, CW ^{[1
]}

Wang, GJ ^{[1
]}

Lin, CT ^{[1
]}

Chou, SW ^{[1
]}

Lo, CP ^{[1
]}

Lin, WJ ^{[1
]}

Lai, JJ ^{[1
]}

Shue, WS ^{[1
]}

Yu, CH ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan

来源：

Advanced Metallization Conference 2005 (AMC 2005) | 2006年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Low resistivity tungsten is privileged to serve the purpose of sustaining low contact resistance for high performance sub-nano devices. Based on the simulation results, the contact resistance is increased dramatically as technology node migrating. Such an increase is mainly contributed by tungsten film itself. Therefore, to lower down the resistivity of tungsten film would be the most effective method to achieve the goal of low contact resistance. In this paper, an innovative process of an extremely low resistivity tungsten film was successfully demonstrated. The process is implemented an extra step of Diborane (B2H6) treatment (B-treatment) on tungsten nucleation layer. The results showed that it can effectively reduce the 15% off of contact resistance from that of conventional CVD film and has a comparable seamless plug-filling capability.

引用

页码：233 / 238

页数：6

共 50 条

[41] Microstructural Optimization of Tungsten for Low Resistivity Using Ion Beam Deposition
Cerio, Frank
Mehta, Rutvik J.
Turner, Paul
Kim, Jinho
Caldwell, Robert
IITC2021: 2021 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2021,
[42] Low resistivity tungsten for 32 nm node MOL contacts and beyond
Papadatos, Filippos
Wong, Keith
Arunachalam, Valli
Shin, Chung Hwan
Li, Zhengwen
Chudzik, Michael
Lee, Woo-Hyeong
Xing, Aimin
MICROELECTRONIC ENGINEERING, 2012, 92 : 123 - 125
[43] INTERNAL STRESSES AND RESISTIVITY OF LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS
SUN, RC
TISONE, TC
CRUZAN, PD
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1009 - 1016
[44] Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices
Roh, K
Youn, S
Yang, S
Roh, Y
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04): : 1562 - 1565
[45] EXTREMELY LOW RESISTIVITY ERBIUM OHMIC CONTACTS TO N-TYPE SILICON
JANEGA, PL
MCCAFFREY, J
LANDHEER, D
APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1415 - 1417
[46] Low-resistivity ZrNx metal gate in MOS devices
Westlinder, J
Malmström, J
Sjöblom, G
Olsson, J
SOLID-STATE ELECTRONICS, 2005, 49 (08) : 1410 - 1413
[47] Special Section on Fundamentals and Applications of Advanced Semiconductor Devices FOREWORD
Ohmi, Shun-ichiro
IEICE TRANSACTIONS ON ELECTRONICS, 2023, E106C (10) : 580 - 580
[48] Special Section on Fundamentals and Applications of Advanced Semiconductor Devices FOREWORD
Hashizume, Tamotsu
IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (05) : 675 - 675
[49] Special Section on Fundamentals and Applications of Advanced Semiconductor Devices FOREWORD
Hirano, Hiroshige
IEICE TRANSACTIONS ON ELECTRONICS, 2022, E105C (10) : 571 - 571
[50] Special Section on Fundamentals and Applications of Advanced Semiconductor Devices FOREWORD
Kachi, Tetsu
IEICE TRANSACTIONS ON ELECTRONICS, 2012, E95C (05) : 769 - 769

← 1 2 3 4 5 →