Extremely low resistivity tungsten for advanced semiconductor devices

被引：0

作者：

Huang, TH ^{[1
]}

Wu, CM ^{[1
]}

Chang, CW ^{[1
]}

Wang, GJ ^{[1
]}

Lin, CT ^{[1
]}

Chou, SW ^{[1
]}

Lo, CP ^{[1
]}

Lin, WJ ^{[1
]}

Lai, JJ ^{[1
]}

Shue, WS ^{[1
]}

Yu, CH ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan

来源：

Advanced Metallization Conference 2005 (AMC 2005) | 2006年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Low resistivity tungsten is privileged to serve the purpose of sustaining low contact resistance for high performance sub-nano devices. Based on the simulation results, the contact resistance is increased dramatically as technology node migrating. Such an increase is mainly contributed by tungsten film itself. Therefore, to lower down the resistivity of tungsten film would be the most effective method to achieve the goal of low contact resistance. In this paper, an innovative process of an extremely low resistivity tungsten film was successfully demonstrated. The process is implemented an extra step of Diborane (B2H6) treatment (B-treatment) on tungsten nucleation layer. The results showed that it can effectively reduce the 15% off of contact resistance from that of conventional CVD film and has a comparable seamless plug-filling capability.

引用

页码：233 / 238

页数：6

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