A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET

被引：60
作者：
Habibpour, Omid [1 ]
Vukusic, Josip [1 ]
Stake, Jan [1 ]
机构：
[1] Chalmers Univ Technol, Terahertz & Millimetre Wave Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2013年 / 61卷 / 02期
关键词：
Graphene; harmonic-balance analysis; microwave field-effect transistors (FETs); millimeter-wave mixers; monolithic microwave integrated circuit (MMIC); subharmonic resistive mixers; RESISTIVE MIXER; GHZ; RF; TECHNOLOGY;
D O I：
10.1109/TMTT.2012.2236434
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 30-GHz integrated subharmonic mixer based on a single graphene field-effect transistor (G-FET) has been designed, fabricated, and characterized. The mixer is realized in microstrip technology on a 250-m-high-resistivity silicon substrate. In order to enhance the current on-off ratio, the G-FET utilizes a channel consisting of an array of bow-tie structured graphene, yielding a current on-off ratio of 7. A conversion loss (CL) of 19 +/- 1 dB over the frequency range of 24-31 GHz is obtained with a local oscillator (LO) to RF isolation better than 20 dB at an LO power of 10 dBm. The overall minimum CL is 18 dB at 27 GHz. The mixer has a 3 GHz +/- 1-dB IF bandwidth, which is achieved with a fixed LO signal of 15 GHz. The mixer linearity is characterized and the highest third-order intercept point is measured to be 12.8 dBm.
引用
收藏
页码：841 / 847
页数：7
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