Positive Bias Temperature Instability Degradation of Buried InGaAs Channel n-MOSFETs with InGaP barrier layer and Al2O3 Dielectric

被引：0

作者：

Wang, S. K. ^{[1
,2
]}

Chang, H. ^{[1
,2
]}

Sun, B. ^{[1
,2
]}

Gong, Z. ^{[1
,2
]}

Liu, H. -G. ^{[1
,2
]}

Ma, L. ^{[3
]}

Li, H. ^{[3
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated C, Beijing, Peoples R China

[3] Guilin Univ Elect Technol, Guangxi Expt Ctr Informat Sci, Guilin, Peoples R China

来源：

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年

关键词：

Interface; PBTI; nMOSFET; Traps; InGaAs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PBTI stress induced interface trap density in buried InGaAs channel n-MOSFETs with InGaP barrier layer and Al2O3 dielectric is investigated. DC Id-Vg measurements show both degradations of positive AVg and sub-threshold swing (S) in the sub-threshold region, also show degradation of positive AVg in the on-current region. The Id-Vg degradation is mainly contributed by generation of acceptor-like near interface traps under stress.

引用

页数：2

共 12 条

[1] Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric
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Chinese Physics Letters, 2017, 34 (05) : 108 - 112
[2] Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress
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Zhang, Fabi
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Liu, Honggang
FRONTIERS IN PHYSICS, 2020, 8
[3] Positive bias instability in gate-first and gate-last InGaAs channel n-MOSFETs
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[8] Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs
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[9] Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric
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[10] Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric
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