Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon-Germanium Solar Cells

被引：13

作者：

Chung, Jin-Won ^{[1
,2
]}

Park, Jun Woong ^{[1
]}

Lee, Yu Jin ^{[1
]}

Ahn, Seh-Won ^{[1
]}

Lee, Heon-Min ^{[1
]}

Park, O. Ok ^{[2
,3
]}

机构：

[1] LG Elect Adv Res Inst, Mat & Components R&D Lab, Seoul 137724, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn, Taejon 305701, South Korea

[3] DGIST, Dept Energy Syst Engn, Taegu 711873, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

关键词：

OPTIMIZATION;

D O I：

10.1143/JJAP.51.10NB16

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon-germanium (a-SiGe:H) solar cells are fabricated with different thicknesses of the i/n graded layer and profiling shapes for appropriate band gap profiling. Comparison of the solar parameters between the U-shape profiling and the exponential shape (E-shape) profiling has been carried out at the same total thickness. In the U-shape profiling, as the thickness of the i/n graded layer increase, the fill factor (FF) and open circuit voltage (V-oc) of p-i-n single-junction a-SiGe:H solar cells increase, but the short circuit current (J(sc)) of cells decreases. In the E-shape profiling, the J(sc) of the a-SiGe:H cell is enhanced without significant losses in V-oc. For further analysis, a modified E-shape profiling is incorporated in a-Si:H/a-SiGe:H double-junction cells, which has resulted in the improvement of V-oc and FF of double-junction cells to 1.67 V and 0.753, respectively, without significant reduction in J(sc, SiGe)(QE), 12.58 mA/cm(2). (C) 2012 The Japan Society of Applied Physics

引用

页数：4

共 16 条

[1] High efficiency silicon-germanium thin film solar cells using graded absorber layer [J].

Fan, Qi Hua ;

Chen, Changyong ;

Liao, Xianbo ;

Xiang, Xianbi ;

Zhang, Shibin ;

Ingler, W. ;

Adiga, Nirupama ;

Hu, Zhihua ;

Cao, Xinmin ;

Du, Wenhui ;

Deng, Xunming .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (07) :1300-1302

[2] Highly stable hydrogenated amorphous silicon germanium solar cells [J].

Gordijn, A ;

Zambrano, RJ ;

Rath, JK ;

Schropp, REI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) :949-952

[3] BAND-GAP PROFILING FOR IMPROVING THE EFFICIENCY OF AMORPHOUS-SILICON ALLOY SOLAR-CELLS [J].

GUHA, S ;

YANG, J ;

PAWLIKIEWICZ, A ;

GLATFELTER, T ;

ROSS, R ;

OVSHINSKY, SR .

APPLIED PHYSICS LETTERS, 1989, 54 (23) :2330-2332

[4]

Hamakawa Y., 2004, THIN FILM SOLAR CELL, P121

[5]

Kim S. H., 2011, INT PVSEC 21

[6]

Lee H.-M., 2011, INT PVSEC 21

[7] Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells [J].

Okamoto, S ;

Maruyama, E ;

Terakawa, A ;

Shinohara, W ;

Nakano, S ;

Hishikawa, Y ;

Wakisaka, K ;

Kiyama, S .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) :85-94

[8] Defect bands in a-SiGe:H alloys with low Ge content [J].

Palinginis, KC ;

Cohen, JD ;

Yang, JC ;

Guha, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :665-669

[9] Investigation of hydrogenated amorphous silicon germanium fabricated under high hydrogen dilution and low deposition temperature conditions for stable solar cells [J].

Shima, M ;

Isomura, M ;

Maruyama, E ;

Okamoto, S ;

Haku, H ;

Wakisaka, K ;

Kiyama, S ;

Tsuda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12A) :6322-6327

[10] OPTIMIZATION OF A-SIGE-H ALLOY COMPOSITION FOR STABLE SOLAR-CELLS [J].

TERAKAWA, A ;

SHIMA, M ;

SAYAMA, K ;

TARUI, H ;

NISHIWAKI, H ;

TSUDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A) :1741-1747

← 1 2 →