Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

被引：5

作者：

Lobanov, D. N. ^{[1
]}

Novikov, A. V. ^{[1
]}

Kudryavtsev, K. E. ^{[1
]}

Shaleev, M. V. ^{[1
]}

Shengurov, D. V. ^{[1
]}

Krasilnik, Z. F. ^{[1
]}

Zakharov, N. D. ^{[2
]}

Werner, P. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

ROOM-TEMPERATURE ELECTROLUMINESCENCE; QUANTUM DOTS; GE/SI; PHOTOLUMINESCENCE; LAYERS;

D O I：

10.1134/S1063782612110115

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of investigation of the electroluminescence of multilayer p-i-n structures with Ge(Si)/Si(001) self-assembled islands are presented. The nonmonotonic dependence of the room-temperature intensity of the electroluminescence signal from islands on the Si spacer thickness is revealed. The highest electroluminescence signal intensity is observed for structures with a Si spacer thickness of 15-20 nm. The significant decrease detected in the electroluminescence signal from the islands in structures with thick Si spacers (> 20 nm) is explained by the formation of defect regions in them. The observed decrease in the electroluminescence signal in structures with thin Si layers is associated with a decrease in the Ge fraction in the islands in these structures, which is caused by enhanced Si diffusion into islands with increasing elastic strains in the structure.

引用

页码：1418 / 1422

页数：5

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