Size effect in Cu nano-interconnects and its implication on electromigration

被引：2
作者：
Hou, Yuejin [1 ]
Tan, Cher Ming [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年
关键词：
Size effect; Nano-interconnect; Electromigration;
D O I：
10.1109/INEC.2008.4585561
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With the interconnect dimensions approaching the length of the mean free path (MFP) of the electron, size effects are becoming important This is manifested in the increase of the resistivity for nano-interconnects. This change in the electrical properties will pose new challenges in the EM performance for Cu nano-interconnects.
引用
收藏
页码：610 / 613
页数：4
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