Isothermal defect annealing in semiconductors investigated by time-delayed Mossbauer spectroscopy: application to ZnO

被引：7
作者：
Gunnlaugsson, H. P. [1 ]
Weyer, G. [1 ]
Mantovan, R. [2 ]
Naidoo, D. [3 ]
Sielemann, R. [4 ]
Bharuth-Ram, K. [5 ]
Fanciulli, M. [2 ]
Johnston, K. [6 ]
Olafsson, S. [7 ]
Langouche, G. [8 ]
机构：
[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
[2] Lab Nazl MDM CNR INFM, I-20041 Agrate Brianza, MI, Italy
[3] Univ Witwatersrand, Sch Phys, ZA-2050 Johannesburg, South Africa
[4] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[5] Univ KwaZulu Natal, Sch Pure & Appl Phys, ZA-4041 Durban, South Africa
[6] CERN, Div EP, CH-1211 Geneva 23, Switzerland
[7] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland
[8] Univ Louvain, Inst Kern Stralingsfysika, B-3001 Louvain, Belgium
来源：
HYPERFINE INTERACTIONS | 2009年 / 188卷 / 1-3期
关键词：
Mossbauer spectroscopy; Diffusion; Activation energies; ZnO; FE;
D O I：
10.1007/s10751-008-9893-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
The theory for so-called Time-Delayed-Measurements is outlined. This method allows for isothermal annealing studies in emission Mossbauer spectroscopy utilizing radioactive beams. The usefulness of this method is illustrated by the example of the annealing of a magnetic defect in ZnO.
引用
收藏
页码：85 / 89
页数：5
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