A fully integrated differential CMOS LNA for 3-5-GHz ultrawideband wireless receivers

被引：65

作者：

Bevilacqua, A ^{[1
]}

Sandner, C

Gerosa, A

Neviani, A

机构：

[1] Univ Padovavia Gradenigo, Dipartimento Ingn Informaz, I-35131 Padua, Italy

[2] Infineon Technol Austria AG, A-9500 Villach, Austria

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 03期

关键词：

complementary metal oxide semiconductor (CMOS); low-noise amplifier (LNA); ultrawideband (UWB);

D O I：

10.1109/LMWC.2006.869855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated differential low-power low-noise amplifier (LNA) for ultrawideband (UWB) systems operating in the 3-5-GHz frequency range is presented. A two-section LC ladder input network is exploited to achieve excellent input match in a wideband fashion and to optimize the noise performance. Prototypes fabricated in a digital 0.13-mu m complementary metal oxide semiconductor technology show the following performance: 9.5-dB peak power gain, 3.5-dB minimum noise figure, -6-dBm input-referred 1-dB compression point, and -0.8-dBm input-referred third-order intercept point, while drawing 11 MA from a 1.5-V supply. The realized LNA is compared with previously reported LNAs tailored for the same frequency range.

引用

页码：134 / 136

页数：3

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