Laser lift-off of AlN/sapphire for UV light-emitting diodes

被引：43

作者：

Aoshima, Hiroki ^{[1
]}

Takeda, Kenichiro ^{[1
]}

Takehara, Kosuke ^{[1
]}

Ito, Shun ^{[1
]}

Mori, Mikiko ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

Amano, Hiroshi ^{[2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Nagoya, Aichi 4648601, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

UV LED; laser lift-off;

D O I：

10.1002/pssc.201100491

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/ sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：753 / 756

页数：4

共 50 条

[41] Transparent electrode for UV light-emitting-diodes
Takehara, Kosuke
Takeda, Kenichiro
Nagata, Kengo
Sakurai, Hisashi
Ito, Shun
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Amano, Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2375 - 2377
[42] Sacrificial layer for laser lift-off process for flexible-display production
Khachatryan, Hayk
Kim, Heewung
Lee, Sung-Nam
Kim, Moojin
Kim, Kyoung-Bo
VACUUM, 2019, 170
[43] GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
Zhang Xiaoying
Ruan Yujiao
Chen Songyan
Li Cheng
JOURNAL OF SEMICONDUCTORS, 2009, 30 (12)
[44] Laser lift-off technique for applications in III-N microelectronics: A review
Chowdhury, Sabuj
Alam, Sabrina
Alam, Md Didarul
Jui, Fahmida Sharmin
MICROELECTRONIC ENGINEERING, 2024, 290
[45] GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
张小英
阮育娇
陈松岩
李成
半导体学报, 2009, 30 (12) : 5 - 8
[46] Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon
Luo, ZS
Cho, Y
Loryuenyong, V
Sands, T
Cheung, NW
Yoo, MC
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (10) : 1400 - 1402
[47] Spectral Dependence of Bovine Coronavirus Photoinactivation under Irradiation by UV-A, UV-B, and UV-C Light-Emitting Diodes
Zavestovskaya, I. N.
Fronya, A. A.
Tupitsyn, I. M.
Gushchin, V. A.
Sinyavin, A. E.
Russu, L. I.
Cheshev, E. A.
Koromyslov, A. L.
Grigor'eva, M. S.
Mavreshko, E. I.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2024, 51 (SUPPL 4) : S345 - S350
[48] Mechanisms of lifetime degradation in Si/ARC samples patterned by laser lift-off
Saenger, K. L.
LASER MATERIAL PROCESSING FOR SOLAR ENERGY, 2012, 8473
[49] Spectral Dependence of Bovine Coronavirus Photoinactivation under Irradiation by UV-A, UV-B, and UV-C Light-Emitting Diodes
Zavestovskaya, I. N.
Fronya, A. A.
Tupitsyn, I. M.
Gushchin, V. A.
Sinyavin, A. E.
Russu, L. I.
Cheshev, E. A.
Koromyslov, A. L.
Grigor'eva, M. S.
Mavreshko, E. I.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2024, 51 : S345 - S350
[50] Comparison of Chemical and Laser Lift-off for the Transfer of InGaN-based p-i-n Junctions from Sapphire to Glass Substrates
Rogers, D. J.
Bove, P.
Teherani, F. Hosseini
Pantzas, K.
Moudakir, T.
Orsal, G.
Patriarche, G.
Gautier, S.
Ougazzaden, A.
Sandana, V. E.
McClintock, R.
Razeghi, M.
OXIDE-BASED MATERIALS AND DEVICES IV, 2013, 8626

← 1 2 3 4 5 →