Laser lift-off of AlN/sapphire for UV light-emitting diodes

被引：43

作者：

Aoshima, Hiroki ^{[1
]}

Takeda, Kenichiro ^{[1
]}

Takehara, Kosuke ^{[1
]}

Ito, Shun ^{[1
]}

Mori, Mikiko ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

Amano, Hiroshi ^{[2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Nagoya, Aichi 4648601, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

UV LED; laser lift-off;

D O I：

10.1002/pssc.201100491

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/ sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：753 / 756

页数：4

共 50 条

[31] AlN and AlGaN by MOVPE for UV light emitting devices
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Mater Sci Forum, 2008, (175-210): : 175 - 210
[32] Mean Differential Continuous Pulse Method for Accurate Optical Measurements of Light-Emitting Diodes and Laser Diodes
Zong, Yuqin
Hulett, Jeff
Koide, Naomasa
Yamaji, Yoshiki
Miller, C. Cameron
JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 2021, 126
[33] Light Extraction of High-Efficient Light-Emitting Diodes
Kim, Ja-Yeon
Jeong, Tak
Lee, Sang Hern
Oh, Hwa Sub
Park, Hyung Jo
Kim, Sang-Mook
Baek, Jong Hyeob
III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 341 - 361
[34] Surface properties of GaN fabricated by laser lift-off and ICP etching
Kim, HS
Dawson, MD
Yeom, GY
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (04) : 567 - 571
[35] Rapid delamination of GaN coatings with femtosecond laser lift-off technique
Paipulas, Domas
Butkus, Simas
Sirutkaitis, Valdas
LASER-BASED MICRO- AND NANOPROCESSING XIII, 2019, 10906
[36] InAlGaN optical emitters - laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
Chua, Christopher
Yang, Zhihong
Knollenberg, Clifford
Teepe, Mark
Cheng, Bowen
Strittmatter, Andre
Bour, David
Johnson, Noble M.
GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939
[37] Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate
Zhou, Feng
Qi, Wei
Ma, Teng
Zou, Can
Qian, Junfan
Xu, Weizong
Wang, Yiwang
Zhou, Dong
Ren, Fangfang
Chen, Dunjun
Zhang, Rong
Zheng, Youdou
Lu, Hai
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 311 - 314
[38] Spatiotemporal evolution of high-aspect-ratio filamentary trace in sapphire of picosecond pulse burst-mode for laser lift-off
Sun Wei-gao
Yan Tian-yang
Wang Yu-heng
Ji Ling-fei
JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2022, 29 (10) : 3304 - 3311
[39] Numerical simulation of AlInGaN ultraviolet light-emitting diodes
Kuo, Yen-Kuang
Yen, Sheng-Horng
Chen, Jun-Rong
OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION III, 2006, 6368
[40] Frequency domain fluorometry with pulsed light-emitting diodes
Herman, Petr
Vecer, Jarosilav
FLUORESCENCE METHODS AND APPLICATIONS: SPECTROSCOPY, IMAGING, AND PROBES, 2008, 1130 : 56 - 61

← 1 2 3 4 5 →