Non-linearity Analysis of Triple Gate SOI Nanowires MOSFETS

被引：0

作者：

Paz, Bruna Cardoso ^{[1
]}

Doria, Rodrigo Trevisoli ^{[1
]}

Casse, Mikael ^{[2
]}

Barraud, Sylvain ^{[2
]}

Reimbold, Gilles ^{[2
]}

Vinet, Maud ^{[2
]}

Faynot, Olivier ^{[2
]}

Pavanello, Marcelo Antonio ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

[2] CEA LETI Minatec, Dept Composants Silicium, SCME LCTE, Grenoble, France

来源：

2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2016年

基金：

巴西圣保罗研究基金会;

关键词：

harmonic distortion; non-linearity; SOI nanowires; HARMONIC-DISTORTION; TRIGATE; PERFORMANCE; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work aims to explore the harmonic distortion of triple gate SOI nanowires MOSFETs, considering long channel devices operating in saturation regime as amplifiers. The Integral Function Method is used to extract the total, second and third order harmonic distortions, which are the main figures of merit analyzed in this work. Low field mobility, surface roughness scattering and series resistance are correlated to the distortion minima. Narrower devices have shown improved linearity.

引用

页数：4

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