Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire

被引：71

作者：

Han, Yuxiang ^{[1
,2
]}

Fu, Mengqi ^{[1
,2
]}

Tang, Zhiqiang ^{[1
,2
]}

Zheng, Xiao ^{[1
,2
]}

Ji, Xianghai ^{[3
,4
]}

Wang, Xiaoye ^{[3
,4
]}

Lin, Weijian ^{[5
]}

Yang, Tao ^{[3
,4
]}

Chen, Qing ^{[1
,2
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[5] Chinese Acad Sci, Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 03期

关键词：

InAs nanowire; PPC; NPC; carrier scattering intrinsic photoelectric response; ELECTRONIC-PROPERTIES; ROOM-TEMPERATURE; PHOTODETECTORS; TRANSPORT;

D O I：

10.1021/acsami.6b13775

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO2, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.

引用

页码：2867 / 2874

页数：8

共 27 条

[1] Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays [J].

Arlauskas, Andrius ;

Treu, Julian ;

Saller, Kai ;

Beleckaite, Ieva ;

Koblmueller, Gregor ;

Krotkus, Arunas .

NANO LETTERS, 2014, 14 (03) :1508-1514

[2] COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS [J].

DEOLIVEIRA, AG ;

RIBEIRO, GM ;

SOARES, DAW ;

CHACHAM, H .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2258-2260

[3] Ultrafast photocurrents and THz generation in single InAs-nanowires [J].

Erhard, Nadine ;

Seifert, Paul ;

Prechtel, Leonhard ;

Hertenberger, Simon ;

Karl, Helmut ;

Abstreiter, Gerhard ;

Koblmueller, Gregor ;

Holleitner, Alexander W. .

ANNALEN DER PHYSIK, 2013, 525 (1-2) :180-188

[4] Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire [J].

Fang, Hehai ;

Hu, Weida ;

Wang, Peng ;

Guo, Nan ;

Luo, Wenjin ;

Zheng, Dingshan ;

Gong, Fan ;

Luo, Man ;

Tian, Hongzheng ;

Zhang, Xutao ;

Luo, Chen ;

Wu, Xing ;

Chen, Pingping ;

Liao, Lei ;

Pan, Anlian ;

Chen, Xiaoshuang ;

Lu, Wei .

NANO LETTERS, 2016, 16 (10) :6416-6424

[5] Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires [J].

Fu, Mengqi ;

Tang, Zhiqiang ;

Li, Xing ;

Ning, Zhiyuan ;

Pan, Dong ;

Zhao, Jianhua ;

Wei, Xianlong ;

Chen, Qing .

NANO LETTERS, 2016, 16 (04) :2478-2484

[6] Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm [J].

Fu, Mengqi ;

Pan, Dong ;

Yang, Yingjun ;

Shi, Tuanwei ;

Zhang, Zhiyong ;

Zhao, Jianhua ;

Xu, H. Q. ;

Chen, Qing .

APPLIED PHYSICS LETTERS, 2014, 105 (14)

[7] Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature [J].

Guo, Nan ;

Hu, Weida ;

Liao, Lei ;

Yip, SenPo ;

Ho, Johnny C. ;

Miao, Jinshui ;

Zhang, Zhi ;

Zou, Jin ;

Jiang, Tao ;

Wu, Shiwei ;

Chen, Xiaoshuang ;

Lu, Wei .

ADVANCED MATERIALS, 2014, 26 (48) :8203-8209

[8] Negative photoconductivity of InAs nanowires [J].

Han, Yuxiang ;

Zheng, Xiao ;

Fu, Mengqi ;

Pan, Dong ;

Li, Xing ;

Guo, Yao ;

Zhao, Jianhua ;

Chen, Qing .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (02) :818-826

[9] High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates [J].

Johansson, Sofia ;

Memisevic, Elvedin ;

Wernersson, Lars-Erik ;

Lind, Erik .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) :518-520

[10] High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared [J].

Liu, Zhe ;

Luo, Tao ;

Liang, Bo ;

Chen, Gui ;

Yu, Gang ;

Xie, Xuming ;

Chen, Di ;

Shen, Guozhen .

NANO RESEARCH, 2013, 6 (11) :775-783

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